国家/地区 中国（5）
IPC部 H（5） C（2）
IPC大类 H01（5） C07（2）
IPC小类 H01L（5） C07C（2） C07D（2）
IPC H01L051/05（5）
发明人 JIA C（5）
公开年 2021（3） 2022（2）
申请年 2020（3）  2021（2） 
专利权人 UNIV NANKAI（5） BEIJING WEIM.（2）

New diamine compound with quantum interference effect, used in preparation of single-molecule field effect transistor.

CHANG X, WANG B, JIA C, LI P, GUO X

New plane conjugated molecular compound used in single-molecule field-effect transistor comprising graphene gate electrode layer, bismuth selenite dielectric bottom layer, and hexagonal boron nitride dielectric top layer.

CHANG X, JIA C, ZHANG M, LI P, GUO X

Two-dimensional van der-waals hetero-structure based single-molecule field effect transistor, has two-dimensional material gate electrode layer, and insulating two-dimensional material dielectric layer.

GUO X, LI P, JIA C, CHANG X

Compound with quantum interference effect used for vertical single-molecule field effect transistor integrated device, containing quantum interference effect compound, is consists of molybdenum disulfide template strip.

GUO X, LI P, JIA C, LIU M

Vertical monomolecular film field effect transistor contains two-dimensional material template layer, self-assembled monolayers, two-dimensional material drain electrode, and conductive two-dimensional material gate electrode layer.

JIA C, LI P, CHANG X, GUO X