国家/地区 法国（4）
IPC部 B（4）
IPC大类 C01（4）
IPC小类 C01B（4） C30B（4） B82Y（3）
B32B（2） H01L（2）
IPC C01B031/02（4） B82Y040/00（3） C30B029/36（3）
C30B029/02（2） H01L021/02（2）
发明人 OUERGHI A（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 CENT NAT REC.（3）

Forming graphene layer on surface of substrate, comprises gradually heating substrate until sublimation of silicon of first row of atoms of free surface of silicon-carbide film, where free surface of silicon layer is stepped.

OUERGHI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C