国家/地区 韩国（4）
IPC部 C（4）
IPC大类 C01（4） H01（4） C23（2）
IPC小类 C01B（4）
IPC H01L029/16（4）
发明人
公开年
申请年
专利权人 POSTECH ACADIND FOUND（4）

Manufacturing semiconductor useful in filed of power conversion devices, electric and electronic systems, comprises e.g. implanting dopant into semiconductor, capping material into two-dimensional honeycomb, and heat treating.

KIMSEONGJUN, KANG M J, SHIN H K, LEE N S, JAE P Y, SUNG M J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Surface processing method for graphene substrate of e.g. organic LED used in electronic device, involves forming organic material on one portion of graphene and surface-processing and forming dielectric thin film on organic material.

JAE Y B, SE J K, HYUN J S

Manufacturing method of silicon carbide semiconductor device, involves forming protective layer on silicon carbide substrate into graphene, activating impurity, and removing protective layer.

KYEONG K C