国家/地区 中国（4） 欧洲专利局（EPO）（4） 法国（2） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/188（7）
发明人 FOURNEL F（2） FUGIER P（2） GOLANSKI L（2）
RODRIGUEZ G（2）
公开年 2018（4） 2017（3）
申请年 2017（7）
专利权人 COMMISSARIAT.（2）

Substrate used to produce graphene film, comprises stack of self-supporting base, electrically insulating layer and catalyst layer with self-supporting base having basic monocrystalline area, in succession and superimposed on each other.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Producing graphene film used in e.g. biological sensors involves forming graphene film by epitaxial deposition in contact with platinum-containing monocrystalline zone of substrate catalyst layer using chemical vapor deposition device.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Controllable step-shape pre-treatment of silicon carbide substrate useful in pyroletic preparation of graphene, comprises placing the cleaned silicon carbide substrate on a susceptor in a chemical vapor deposition CVD apparatus, and heating.

ZHAO Z, LI Y, WANG Y, LI Z

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Preparing large-area regular epitaxial graphene doped with metal atoms comprises e.g. taking monocrystal silicon carbide substrate as growth substrate, heating the monocrystal silicon carbide sample and degassing.

HU T, MA F, XU K, MA D, LIU X, ZHANG X

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Growing patterned graphene on electrode surface by placing substrate with electrode in carbon source, irradiating surface of electrode with laser light and growing graphene film layer on electrode surface at irradiation site.

CHEN G, GUO T, CHEN H, HU H, YE Y