国家/地区 韩国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） B32B（2） C01B（2）
C30B（2）
IPC C23C014/48（4）
发明人
公开年 2011（2）
申请年
专利权人

High-heat radiation thin film for use as heat radiation material for e.g. electronic device, comprises carbon layer arranged on metallic board, where thickness of metallic board is specific value and carbon layer is made up of graphene.

MIN E H, CHO S H, CHOI B K, HONG M E, HO C S, KEUN C B, CHO S

Forming a graphene layer used in e.g. electric devices, or transparent electrodes involves forming metal thin film on substrate; injecting carbon ions into the thin film; and heat-treating the carbon ions injected into the thin film.

CHO B J, MUN J H

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C