国家/地区 美国（12）
IPC部 B（12）
IPC大类 B82（12） C01（12） C23（12）
H01（12） B32（8） B05（4）
IPC小类 B82Y（12）
IPC B82Y040/00（12）
发明人 HONG B H（4） AHN J（3） AHN J H（3）
FAN F Y（3） FAN S（3） HONG B（3）
JIANG K（3） LIN X（3） LIN X Y（3）
XIAO L（3） LEE K（2）
公开年 2012（9） 2011（2）
申请年 2011（12）
专利权人 HON HAI PREC.（3） HONGFUJIN PR.（3） UNIV TSINGHU.（3） GRAPHENE SQU.（2）
KOREA ADV IN.（2） SAMSUNG TECH.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Stable graphene film for graphene transparent electrode for touch screen, comprises graphene film and conductive protective film.

AHN J H, HONG B H, YAN C, AHN J

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S