国家/地区 美国（7）
IPC部 C（7）
IPC大类 C07（7）
IPC小类 H01L（7） C01B（6） B82Y（5）
C07C（5） B82B（4） C07B（2）
C08G（2） C23C（2） H01B（2）
IPC H01L051/05（7）
发明人 HINTERMANN T（2）
公开年 2014（3）
申请年 2013（3） 
专利权人 BASF SE（2）

Graphene nanoribbon precursor for use in graphene nanoribbon that is utilized in electronic device for channel of FET and resonant tunneling diode, comprises substituted terphenyl compound.

YAMAGUCHI J

Purifying graphene nanoribbons, involves contacting composition comprising graphene nanoribbons and contaminants with liquid medium comprising dispersant, and dispersing nanoribbons in liquid medium and subjecting the dispersion.

HINTERMANN T, SCHWAB M G, CHA K C, WEITZ T, SCHAEFER A, MUELLER I B, WEITZE T, SCHWAB M G S, CHA K C P

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Platelet useful in electronic device comprises graphene layer and a protein layer on the surface of the graphene layer.

LAAKSONEN P, AHOPELTO J, LINDER M