国家/地区 美国（6） 世界知识产权组织（4） 韩国（3） 欧洲专利局（EPO）（2） 日本（2）
IPC部 B（7）
IPC大类 B82（7）
IPC小类 B82B（7）
IPC C01B031/02（7）
发明人
公开年 2013（3） 2011（2） 2012（2）
申请年 2011（7）
专利权人

System used in e.g. conductive paint, conductive lacquer and electromagnetic shielding comprises device containing a hybrid composite that comprises tubular carbon and graphene in the form of graphene flake or graphene nano platelets.

NGUYEN K C, HIEU D, KHE N, NGUYEN C K, DINH H

Manufacture of graphene transparent electrode for e.g. solar cell, involves providing graphene oxide solution, forming thin metal film on substrate, coating graphene oxide, drying, compressing transparent film layer and etching.

CHEON K U, HEON H G, KIM W C, HUR K H

Manufacturing graphene, useful in nano-composite material, comprises reforming graphene, adding fatty acid of epoxy ring cleavage reaction catalyst in presence of solvent, and dispersing obtained graphene into the solvent.

SEOP Y H, JIN K Y, HWAN S B, MO J H, JIN H S, YOO H S, KIM Y J, SHIN B H, JEONG H M, HAN S J

Graphene-based storage material, useful in a lithium ion battery, comprises graphene sheets disposed in a vertical stack, where the graphene sheets, within the vertical stack, comprise randomly-distributed defect pores.

KUNG H H, ZHAO X, HAYNER C M, KUNG M C

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C

Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material.

ARNOLD M, GOPALAN P, SAFRON N S, KIM M, ARNOLD M S

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J