国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/186（3） C01B032/194（2）
发明人 PENG H（5）
公开年 2021（3） 2020（2）
申请年 2020（5）
专利权人 BEIJING GRAP.（3） UNIV PEKING（2）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Directly preparing high-quality graphene from biomass comprises e.g. placing raw material into fixed bed, performing activation treatment, adding hydrochloric acid, nitric acid or hydrogen fluoride aqueous solution into graphene, and drying.

LIU H, CHEN W, HUO C, XU C, ZHANG R, LI F, PENG H, TANG D, LI X, REN Y

Carrier used for preparing graphene by plasma enhanced chemical vapor deposition, comprises two oppositely set polar plates and growth substrate, where carrier comprises sleeve, hollow structure, first supporting parts and second supporting parts.

PENG H, WANG K, YANG H, WANG X, CAO F, WU Q, LIU Z

Parylene based graphene transfer involves using chemical vapor deposition method to grow graphene on obtained metal substrate to obtain graphene plus metal structure.

LI Q, CHEN W, PENG H, LI T

Transferring graphene wafer comprises e.g. providing graphene wafer with metal substrate, using electrochemical bubbling process to peeling graphene wafer from metal substrate, and bubbling system in electrochemical bubbling process.

PENG H, LIU Z, YAN R, TANG J, DU Y