国家/地区 日本（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/02（5） C01B031/04（5）
发明人 FUJII K（6）
公开年 2011（6）
申请年 2009（3）  2010（3） 
专利权人 FUJI ELECTRI.（6） FUJI ELECTRI.（3）

Manufacture of graphene film used as preform of carbon material, involves oxidizing graphite, sieving, dispersing graphite oxide remained on sieve in solvent, peeling of graphite oxide in layer form and coating liquid on substrate.

FUJII K

Manufacture of graphene film involves supplying carbon containing gas to substrate which installed seed graphene crystal and forming graphene film on substrate by chemical vapor deposition process.

FUJII K, SHIMIZU A

Manufacture of graphene film involves casting suspension liquid containing oxidized graphene on substrate, heating and reducing cast film in presence of metal hydride.

FUJII K, SHIMIZU A

Manufacture of graphene thin film as transparent conductive film for solar cell, involves coating dispersion liquid containing oxidized graphene powder on substrate, contacting metal with formed oxidized graphene thin film, and heating.

FUJII K, SHIMIZU A

Solid acid e.g. used for proton conducting membrane contains oxidation graphite and/or oxidation graphene with specified thickness.

KAWAHARA Y, FUJII K

Manufacture of graphene thin film used for transparent electrode, involves coating graphene solutions formed by modifying graphene using electron-acceptor organic molecules, and electron donor organic molecules on substrate.

FUJII K, SHIMIZU A