国家/地区 美国（7） 韩国（4） 世界知识产权组织（3） 中国（2） 欧洲专利局（EPO）（2）
IPC部 B（7）
IPC大类 B32（7）
IPC小类 B32B（7）
IPC C01B031/04（5） B32B009/00（3） C01B031/02（3）
C23F001/00（3） B05D003/10（2） B82Y030/00（2）
B82Y040/00（2） C23C016/26（2） H01L021/02（2）
发明人 CHOI J（2）
公开年 2010（7）
申请年 2009（4）  2008（2） 
专利权人 SAMSUNG ELEC.（2）

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

Graphene sheet, e.g. for transparent electrode used in solar cell includes intercalation compound interposed between unit graphene layers.

CHOI J, CHOI J Y

Graphene used for device and graphene sheet, comprises etched edge portion comprising functional group of carbonyl, carboxy, hydroxy, formyl and/or oxycarbonyl.

CHOI J, CHOI W M, HONG B H, CHOI W, HONG B

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

Sidewall graphene device fabricating process, involves forming protruding or mesa structure with sidewall surface, and forming device structure in contact with material layer in fin FET configuration.

CHEN A, KRIVOKAPIC Z

AA' stacked graphite for use as e.g. electrode material for flexible display, comprises graphene stacked in sequence of AA', where AA' sequence is alternate graphene layers exhibiting AA' stacking translated by half hexagon.

AHN J, LEE J, LEE S, LEE W, LEE U, LEE J K, LEE S H, AHN J P, LEE S C, LEE W S

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J