国家/地区 中国（2）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C30B029/40（3） C23C014/06（2） C23C016/30（2）
发明人
公开年 2020（2）
申请年 2019（4）
专利权人

Phonovoltaic cell used as part of phonovoltaic pile of contiguous phonovoltaic cell comprises first and second conductor layer, first boron layer in contact with the first conductor layer, second boron layer in contact with the second boron layer.

CURRAN P

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Producing hexagonal boron nitride thin film useful for photoelectric device, light-emitting and light-receiving device, comprises forming hexagonal boron nitride thin film on graphene oxide layer by supplying e.g. boron-containing precursor.

KO K B, YOO B, HAN M, TRANVEITCUONG, HONG C

Preparing large-sized high-quality single-layer graphene involves drying frosted glass after washing, and uniformly coating liquid phase substrate on surface, and coating frosted glass with liquid phase substrate.

LU C, YE G, LI L, YU S, ZHAO X