国家/地区 日本（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C30B（4）
IPC C01B031/02（3） C30B029/02（3） C23C016/26（2）
发明人
公开年 2014（4）
申请年 2013（3） 
专利权人

Manufacture of single crystal graphene involves thermal decomposition of carbon source by guiding vaporized carbon source vapor with camphor to a heated substrate, and thermally decomposing the compound on the substrate surface.

SHARMA S, TANEMURA M, UMENO M, KALITA G

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Rolled copper foil used for manufacture of graphene for e.g. mercury-free fluorescent lamp, has specified ratio of maximum value for detection strengths occurring under specified conditions based on specific direct pole figure.

CHIBA YOSHIHIRO, CHIBA Y