国家/地区 美国（6）
IPC部 B（6）
IPC大类 B01（6） C01（5） B82（3）
H01（3）
IPC小类 B01J（6）
IPC B01J019/08（6）
发明人 BYUNG Y S（2） CHOI K（2） CHOI N（2）
HAN Y J（2） HYOUNG S S（2） JUNG H（2）
JUNG H L（2） KIL S C（2） LEE J（2）
NAG E C（2） SHIM H（2） SONG B（2）
公开年 2013（3） 2014（3）
申请年 2013（6）
专利权人 SNU R DB FO.（2） TOSHIBA SAMS.（2） UNIV SEOUL N.（2）

Apparatus for fabricating graphene comprises light source for irradiating graphite oxide layer on substrate; light source for irradiating irradiated graphite oxide layer; control unit for controlling irradiation from the light sources.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Fabricating graphene, i.e. an allotrope of carbon, comprises irradiating graphite oxide layer on substrate with light from first light source, and irradiating the irradiated graphite oxide layer with light from second light source.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Heat conducting composite material, useful in thermal garment, solar microwave water purifier, infrared paint or LED, comprises a matrix, and many graphene sheets respectively having two-dimensional planar structure.

LIN H, LIN I, LIN Y, SONG J, SUNG C, SUNG C M, LIN I C

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B

Fabricating graphene comprises inserting first electrode that is graphite multilayer material and second electrode into electrolyte without contacting, producing potential difference and permitting liquid to enter into first electrode layer.

LING Y, WANG C, LIU J, LING Y C, WANG C P, LIU J Y

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A