国家/地区 美国（6） 中国（3） 欧洲专利局（EPO）（3） 日本（3） 韩国（3） 世界知识产权组织（3）
IPC部 B（6）
IPC大类 B05（6） C01（5） H01（5）
B82（4） B32（3） C23（2）
IPC小类 B05D（6）
IPC B05D005/12（6）
发明人
公开年 2010（6）
申请年 2009（3）  2010（2） 
专利权人

Producing e.g. multi-graphene dispersion, useful as electrode material in lithium ion battery, comprises dispersing graphite oxide in dispersion medium to form multi-graphene oxide dispersion, and thermally reducing the oxide in dispersion.

NESPER R, TOMMY K, NESEUPEO R, TOMI K, NIRSBOR R, NISPORRE R, KASPAR T

Method for providing electrical connection to portion of graphene layer used in e.g. microelectronic device, involves forming recess that create boundary between first portion of recess and second portion of recess.

HAQUE S, LEHTINIEMI R K, KARKKAINEN A M, LECHNER L, HAKONEN P, HAQUE S M, LEHTINIEMI R, KAERKKAEINEN A

Composition, useful for e.g. making articles e.g. fuel filter housings, rubber goods, tires, heat sinks, pipes, sensor components and gaskets, comprises at least one polymer binder e.g. polyamide, graphene sheets, and graphite.

VARMA V, SHEFFER D, GINNEMAN C R, LETTOW J S, SCHEFFER D, SHAF D, ZINNEMAN C R

Formation of film of graphite oxide single layers used in graphene conducting film for electronic devices, by preparing solution of graphite oxide to form graphite oxide single layers, and applying solution onto air-water interface of water.

HUANG J, COTE L J, KIM F J

Graphene structure for electronic device elements, contains graphene fixed to substrate in which bonding is formed between portion to which hydrophilic process is performed, or portion to which hydrophilic process is not performed.

SANDHU A

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C