国家/地区 韩国（4） 美国（4） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 中国（2）
IPC部 B（5）
IPC大类 B82（5）
IPC小类 B82Y（5）
IPC B82Y030/00（5）
发明人 KIM S（5）
公开年 2016（3）
申请年 2015（2） 
专利权人 UNIV SEOUL N.（2）

Measuring thickness of graphene layer grown on silicon substrate by using X-ray photoelectron spectroscopy device comprises obtaining signal intensities from graphene layer to emit X-ray radiation and calculating thickness of graphene layer.

LEE E, CHO Y, KIM S, BYUN K, SONG H, SHIN H

Graphene membrane film used in system for purifying solvent, comprises several plate-shaped laminated graphene flakes containing physical bond or chemical bond for connecting pair of layers, and has preset thickness and oxygen content.

LEE S H, KIM S J, SEO D K, KIM Y H, GEONHUI L, LEE S, KIM S

Apparatus for manufacturing cell sheet, has graphene layer that is formed adjacently in electrode, and patterned electrode that is formed adjacently in support layer.

KIM D, CHOI S, HYEON T, KIM S, CHO H, CHO K, HONG C S, HWAN H T, HYEONG K D, JU K S, RIM C H, WON C G

Tunneling diode used for diode-based optoelectronic device, consists of silicon quantum dot layer formed on silicon oxide thin film, doped layer having structure having graphene-silicon quantum dot hybrid structure, and electrode.

CHOI S H, SHIN D H, KIM S, SUK H C, DONG H S, SUNG K, CHIO S, SHIN D, JIN C

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W