国家/地区 美国（306）
IPC部 C（306）
IPC大类 C01（306） H01（131） B82（113）
B01（72） C08（43） C09（40）
C23（40） B32（32） C07（20）
C25（19） C30（19） B05（18）
D01（18） H05（15） G01（14）
IPC小类 C01B（306）
IPC C01B032/184（306）
发明人 JANG B Z（23） ZHAMU A（21） ZHANG J（8）
CHOI J（7） TOUR J M（6） ALGHAMDI A A S（5）
ALTURKI Y A（5） ELSAYED W E M（5） KIM H K（5）
LI J（5） LIN Y（5） LIU X（5）
TANG Y（5） WANG Y（5） ZHANG L（5）
公开年 2021（52） 2017（48） 2015（34） 2018（28） 2020（26） 2022（26） 2016（25） 2013（16） 2014（15） 2019（12） 2023（10） 2012（7） 2011（4） 2010（2）
申请年 2015（39）  2021（37）  2016（36）  2020（36）  2017（34）  2014（23）  2018（22）  2022（22）  2013（19）  2019（15）  2012（11）  2011（7）  2010（4） 
专利权人 NANOTEK INST.（23） JANG B Z（7） SAMSUNG ELEC.（7） ZHAMU A（7）
GLOBAL GRAPH.（6） LYTEN INC（6） UNIV RICE WI.（6） UNIV RICE WI.（6）
FUJITSU LTD（5） JINAN SHENGQ.（5） KOREA INST S.（5） UNIV KING AB.（5）
CARBON HOLDI.（4） BASF SE（3） EMPIRE TECHN.（3） HON HAI PREC.（3）
JINAN SHENGQ.（3） JINAN SHENGQ.（3） KOREA ADVANC.（3） KOREA ELECTR.（3）

Preparing carbon nanomaterial product for medical device, structural enhancement additive, and strength enhancement additive, involves heating electrolyte media to obtain molten electrolyte media, positioning molten electrolyte media between high-nickel content anode and cathode of electrolytic cell.

LICHT G, LICHT S

Preparing reduced acylated graphene oxide used in electrode active material of lithium secondary battery, involves subjecting graphene oxide to acylation reaction to prepare acylated graphene oxide, and reducing the acylated graphene oxide.

KIM D H, PARK S, YEON S, SHIN K, JIN C, HWANG S H, SEUNGHAE H, JIN C S, HEE S K

Preparing carbon particle, involves loading hydrocarbon gas into inert gas to form gas mixture within reactor, heating gas mixture to form heated gas mixture, and mixing natural gas into heated gas mixture within the reactor to form carbon particle.

HANSON R J, JOHNSON P L, TAYLOR R W, HARDMAN N J

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Production of solid carbon used in composition of matter, involves receiving carbon dioxide and water in reactor, dissociating carbon dioxide and water to form dissociated species, exposing dissociated species to electric field to facilitate reactions, generating and outputting solid carbon.

STOWELL M W, SIENKO L, STOWELL W M

Fluid system component used in fluid transport, fluid control, fluid operations has body containing multidimensional shape defined in orthogonal directions and layers stacked along one of directions.

MARYA M, ZOLFAGHARI A, KARUPPOOR S S

Producing metal hybrid graphene, comprises providing ball mill chamber filled with inert gas and metal balls, inserting graphene, nanographite, and nanosized transition metal into chamber, turning chamber, and extracting graphene.

MURILLO C M, HENDRIX J W

Gel for forming channel in field-effect transistor biosensor, is made of boron and nitrogen co-doped graphene oxide, where gel is functionalized with receptor, and gel includes boron-nitrogen bonds, boron-carbon bonds, boron-carbon-oxygen bond, pyridinic nitrogen bonds, and pyrrolic nitrogen bonds.

BAJCSY M, YAVUZ M, NOVODCHUK I

Synthesizing self-assembled mixed-dimensional heterostructure used in composition, involves depositing boron on substrate to grow borophene on it at substrate temperature in ultrahigh vacuum chamber, depositing orderly 4,4-dibromo-p-terphenyl on borophene grown substrate at room temperature.

AKLILE E B, LIU X, LI Q, HERSAM M C