国家/地区 中国（7） 欧洲专利局（EPO）（7） 日本（7） 韩国（7） 台湾（7） 美国（7） 世界知识产权组织（7） 印度（6） 以色列（4） 俄罗斯（4） 新加坡（4）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（7）
发明人 MULLEN K（7）
公开年 2013（4） 2015（2）
申请年 2012（4） 
专利权人 BASF SE（7） MAX PLANCK G.（6） BASF CHINA C.（5） BASF AG（4）

New ortho-terphenyl derivatives used for preparing graphene nanoribbons for thin film semiconductor for use in optical device, such as organic field effect transistor device, organic photovoltaic device or organic light-emitting diode.

SCHWAB M G, MULLEN K, FENG X, DUMSLAFF T, RUFFIEUX P, FASEL R, MUELLEN K

Graphene nanoribbon comprises repeating unit comprising edge carbons which can unambiguously be assigned as zigzag or cove type carbon atoms.

SCHWAB M G, MUELLEN K, FENG X, YANG B, DUMSLAFF T, FASEL R, RUFFIEUX P, LIU J, CAI J, SANCHEZSANCHEZ C, MULLEN K, SANCHEZ S C, TSAI J, MILLEN K

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

New oligophenylene monomer useful for preparing a polymeric precursor for producing graphene nanoribbons useful in an electronic, optical, or optoelectronic device.

SCHWAB M G, NARITA A, FENG X, MUELLEN K, MULLEN K, SCHWAB M G S, SCHVAB M G, MILLEN K

Segmented graphene nanoribbon useful for generating heterojunctions and heterostructures, comprises at least two different graphene segments covalently linked to each other.

BLANKENBURG S, CAI J, FASEL R, FENG X, MUELLEN K, PASSERONE D, PIGNEDOLI C, RUFFIEUX P, MULLEN K, PIGNEDOLI C A, TSAI J, CAI Y

New oligophenylene monomers, useful for synthesizing polymeric precursors for preparing graphene nanoribbons.

IVANOVICI S, SCHWAB M G S, FENG X, MUELLEN K, SCHWAB M G, MULLEN K, KLAUS M, SCHVAB M G, SCHWAB M, MILLEN K

New graphene nanoribbon precursors comprising polycyclic aromatic hydrocarbon repeat units, used in graphene nanoribbons for field-effect transistors.

SCHWAB M G S, MUELLEN K, FENG X, DOESSEL L, SCHWAB M G, MULLEN K, DOSSEL L, SCHVAB M G