国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） C23（5） B82（3）
C30（2） H01（2）
IPC小类 C01B（5）
IPC C23C014/14（5）
发明人 KIM J（2）
公开年
申请年 2012（2） 
专利权人

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Composite substrate used for optoelectronic component and thin film solar battery, comprises single graphene layer and metal nano array layer.

REN F, YING J, JIANG C, XIAO X, DAI Z

Alloy method for preparing large area graphene thin film by depositing carbon alloy film on high temperature resistant substrate, annealing film, providing carbon atom concentration in alloy thin film surface and growing graphene thin film.

XU Z

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K