国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4） C23（4） H01（3）
B01（2）
IPC小类 C01B（4）
IPC C23C016/26（4）
发明人
公开年 2013（2）
申请年
专利权人

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Manufacture of graphene used for e.g. graphene sheet, involves reacting reaction gas including carbon source, and heat on substrate.

AHN J, BAE S K, HONG B H, JUNG M H, KIM H R, KIM S J, AHN J H, BAE S