国家/地区 韩国（4） 美国（3）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/06（4）
发明人
公开年 2015（4）
申请年 2013（2）  2015（2） 
专利权人

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Synthesizing graphene using copper vapor, comprises preparing substrate, placing copper foil on substrate, forming copper vapor from copper foil, and contacting graphene precursor gas on substrate for synthesizing graphene on substrate.

CHOI H C, KIM H K, SONG I T

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S