国家/地区 韩国（3） 美国（3） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C01（5） C23（5） H01（3）
B82（2）
IPC小类 C01B（5）
IPC C23C016/505（5）
发明人 LEE C（2） LEE C S（2） SHIN H（2）
SHIN H J（2） SHIN K（2） SHIN K W（2）
公开年 2023（5）
申请年 2022（3）  2021（2） 
专利权人 SAMSUNG ELEC.（2）

Wrinkle flattening unit for flattening wrinkles present in graphene composite structure, has rotation portion that comprises outer rotation unit having multiple suction holes communicating with branch passage and supporting one surface of composite structure.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Process for instantiating elemental metal within ultramicro pore of nanoporous carbon powder composition involves initiating gas flow in reactor assembly, reactor chamber containing nanoporous carbon powder, first porous frit, second porous frit, reactor head space, and computer processing unit.

BRODEUR C L, NAGEL C J

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S