国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（7）
发明人 FU Y（2） HUANG R（2） LIU Z（2）
PENG H（2） WEI Z（2） YE T（2）
ZHANG X（2） ZHANG Y（2）
公开年 2012（3） 2013（3）
申请年 2012（7）
专利权人 UNIV PEKING（7）

Preparation of phosphorus-doped graphene used for oxygen reduction reaction catalysis involves reacting graphite oxide and organic phosphorus compound.

HOU Y, ZHANG C

Graphene film preparation comprises providing graphene thin film grown on substrate, spin-coating polyvinyl alcohol acetal glue on film surface, and suspending whole thin film in etching solution.

ZHANG Y, GAN Z, FENG Q, WEI Y

Modulation-doped single-crystal graphene pn junction prepared by putting copper foil into reactor, introducing mixed gas and inert gas into the reactor, passing mixed gas into copper foil, and cooling, useful in logic device.

WU D, YAN K, LIU Z, PENG H

Covalent modification of single-layer graphene comprises forming graphene on substrate, and adding polymethyl methacrylate solution to a surface of modified graphene and then heating and curing to form polymethyl methacrylate film.

LIU Z, YU J, PENG H, XIE Q, ZHANG L

Preparing graphene nanometer belt for making integrated circuit, involves preparing graphene on substrate, using metal nano-particles, etching along graphene preferred direction in annealing process, in boundary domain function of graphene.

FU Y, HUANG R, WEI Z, ZHANG X, YE T, ZHOU M

Preparation of atom scale graphene groove, e.g. for nano-electronics field, by suspending graphene on high temperature resistant substrate, depositing metal atoms on surface, etching in argon/hydrogen atmosphere, cooling, and vacuum-drying.

FU Y, HUANG R, LI C, WEI Z, ZHANG X, YE T

Preparation of graphene used in preparing conductive polymer nanocomposite material, by dispersing graphite oxide in solvent, subjecting into ultrasonic peeling treatment, irradiating with gamma-ray at room temperature, and filtering.

LI J, PENG J, ZHAI M, ZHANG Y