国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/186（3） C01B032/184（2） C01B032/194（2）
发明人 ZHOU C（7）
公开年 2017（4） 2018（3）
申请年 2017（7）
专利权人 13TH RES INS.（4） CHANGZHOU CA.（2）

Preparing single-layer graphene on the surface of ultra-nano diamond comprises pre-processing ultra-nano-diamond film for removing surface impurities and surface stress, forming metal layer and subjecting to high temperature annealing.

GUO J, WEI C, FENG Z, FANG Y, HE Z, WANG J, LIU Q, ZHOU C, GAO X

Temperature graphene homogenizer has refrigerating cylinder which is connected to storage tank through pipe housing which is provided with pump main portion and storage tank which is filled with refrigerant.

ZHOU C

Modified chemical vapor deposition for preparing uniform graphene material, involves selecting silicon carbide substrate, cleaning, drying, vacuumizing, turning on microwave power, heating and removing gas adsorbed on surface substrate.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z, YU C

Preparation of low-fold density graphene material involves taking insulating substrate, cleaning, drying, putting into chemical vapor deposition equipment, vacuumizing, turning on the microwave power, heating and reacting.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z

Graphene powder coating device has stirring frame which is arranged with supporting rod, and heating wire which is provided in supporting rod.

ZHOU C

Preparation of nanocrystalline graphene on sapphire substrate, involves placing sapphire substrate in graphene plasma-enhanced chemical vapor deposition equipment, introducing inert gas, pretreating substrate in hydrogen atmosphere.

WEI C, FENG Z, LIU Q, HE Z, WANG J, SONG X, ZHOU C

Preparing graphene oxide involves diluting graphene oxide solution by solvent and stirring, centrifuging at room temperature, stirring to obtain large-size graphene oxide and subjected to ultrasonic treatment at certain power.

ZHOU Z, HE X, HAN Z, YANG J, ZHOU C