国家/地区 美国（6）
IPC部 C（6）
IPC大类 C01（6） H01（5） C23（3）
B82（2） C30（2）
IPC小类 C01B（6）
IPC C01B031/04（5） C23C016/26（3） B82Y030/00（2）
B82Y040/00（2） C23C016/02（2） C23C016/56（2）
C30B025/02（2） H01L029/16（2） H01M004/587（2）
发明人 ZHANG Y（6） DENG P（2） GUO H（2）
LEI T（2） ZHANG K（2）
公开年 2012（2） 2014（2）
申请年 2012（4） 
专利权人 ZHANG Y（6）

Preparation of graphene used in e.g. gas absorption application, involves immersing refined coal powder in activating solution, carbonizing obtained molten mixture, acid-washing and water-washing obtained carbonized product, and drying.

ZHANG Y

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Composition used for removing components from fluids e.g. sewage water and waste water, and for forming capacitor, comprises structure having graphene sheets and carbon nanotubes disposed between graphene sheets.

WEI L, ZHANG Y

Material composition used for electrode e.g. cathode for battery e.g. lithium-sulfur battery, comprises graphene oxide-sulfur nanocomposite including graphene oxide containing functional groups, and sulfur bonded to carbon atoms.

ZHANG Y, CAIRNS E J, JI L, RAO M, CAIRNS E

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y