国家/地区 美国（5） 中国（4） 世界知识产权组织（2）
IPC部 C（8）
IPC大类 C01（8） C04（8） B82（5）
C23（2） H01（2）
IPC小类 C01B（8）
IPC C01B031/04（8）
发明人 WU Y（2）
公开年 2013（4） 2012（3）
申请年 2012（8）
专利权人

Manufacture of expanded graphite used for manufacturing graphene product, involves placing expandable graphite within chamber, applying vacuum to chamber and applying electric current to vacuum-induction heat-expandable graphite.

WU Y, GARDNER S J

Graphene-based heat dissipation system for e.g. portable microelectronic device, has heat-conducting layer comprising sheet of integrated graphene film, which shields component or external surface of electronic device from heat.

ZHAMU A, WANG M, XIONG W, JANG B Z

Producing graphene, comprises causing motion of enclosed container comprising substrate material and graphite material within container, and coating surfaces of substrate material with graphite material responsive to motion of container.

CHANG C, CHANG T

Preparing graphene, involves oxidizing graphite material, dispersing graphite oxide in water, and adding dispersing agent and acidic reducing agent to graphite oxide aqueous suspension so that graphite oxide is reduced to graphene.

WU Y, HSIEH C, PENG C, CHEN J, LIN J, LIN G

Manufacture of graphene powder for e.g. photoelectric device, involves decomposing organic substances by fast heating in oxyhydrogen flame, and reconfiguring produced active carbon atoms on insulating substrate or catalyst substrate.

HUANG F, LIN T

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Interface modification of carbon/carbon composite material, involves dissolving graphite polymer in chemical solution and obtaining graphene oxide/polymer coating solution, and adding carbon fiber graphite/polymer to coating solution.

BU H, LI M, TIAN X, JIANG Z, ZHANG D, HUANG Y, LIU L, ZHOU B, LI J, MA Z

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F