国家/地区 中国（4）
IPC部 C（4）
IPC大类 C04（4）
IPC小类 C04B（4）
IPC C04B041/50（4）
发明人 GUO H（4） LEI T（4） ZHANG K（4）
ZHANG Y（4） ZHAO Y（4）
公开年 2013（4）
申请年 2012（4）
专利权人 UNIV XIDIAN（4）

Preparation of silicon substrate patterned graphene for semiconductor element, involves growing silicon carbide layer, silica layer, pattern window, and carbon film on substrate, removing silica, coating copper film, and annealing.

GUO H, ZHANG K, ZHANG Y, ZHAO Y, LEI T, ZHANG C

Preparation of patterned graphene material for transistor, by cleaning silicon carbide wafer, coating photoresist layer, placing in buffered hydrofluoric acid solution, carrying out electron beam deposition of nickel film, and patterning.

LEI T, ZHANG Y, TANG X, ZHANG K, ZHAO Y, GUO H

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises growing carbon layer on substrate, growing carbon-silicon carbide layer and performing physical vapor deposition to plate copper film.

GUO H, ZHAO Y, LEI T, ZHANG Y, ZHANG K

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises performing plasma-enhanced chemical vapor deposition to deposit silicon dioxide and performing physical vapor deposition to plate copper film.

ZHANG Y, WEI C, LEI T, ZHANG K, GUO H, ZHAO Y