国家/地区 中国（11）
IPC部 C（11）
IPC大类 C04（11） C01（5） B82（3）
C23（3） H01（3） B32（2）
IPC小类 C04B（11）
IPC C01B031/04（5） C04B041/50（4） B82Y040/00（3）
B82Y030/00（2） C01B031/02（2） C04B035/52（2）
C04B035/622（2） C23C016/02（2） C23C016/56（2）
H01B001/04（2）
发明人 CHENG H（2） LI J（2）
公开年 2012（11）
申请年 2012（8）  2011（3） 
专利权人

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Interface modification of carbon/carbon composite material, involves dissolving graphite polymer in chemical solution and obtaining graphene oxide/polymer coating solution, and adding carbon fiber graphite/polymer to coating solution.

BU H, LI M, TIAN X, JIANG Z, ZHANG D, HUANG Y, LIU L, ZHOU B, LI J, MA Z

Graphene-based storage material, useful in a lithium ion battery, comprises graphene sheets disposed in a vertical stack, where the graphene sheets, within the vertical stack, comprise randomly-distributed defect pores.

KUNG H H, ZHAO X, HAYNER C M, KUNG M C

Graphene/dual-phase calcium phosphate composite material is obtained using graphene nanosheet as tough phase and dual-phase calcium phosphate as substrate in specific mass ratio.

CHUI P, LIANG Y, SUN K, SUN X, WANG W, WANG Y, ZHAO Y

Manufacture of rare earth-modified graphene ceramic composite film on glass substrate involves pretreating substrate, placing graphene in rare earth sol solution, immersing substrate, drying, heating, and cooling.

BAI T, QU H, OUYANG C, ZHU S

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Graphene-oxide ceramic composite material for e.g. sensor, is obtained by mixing graphite oxide and ceramic powder, molding, heat-sintering, reducing graphite oxide into graphene and sintering ceramic powder to ceramic component.

LI Y, YIN Z, ZHANG H

Preparing graphene composite film on silicon wafer surface comprises silicon wafer surface assembled with amino silane film, soaking in graphene oxide suspension, and drying and heating film to obtain the reduced graphene composite film.

CHENG H, CHENG X, LEI Z, SHU D, WANG C

Manufacture of graphite alkene film and graphene composite carbon film for manufacturing semiconductor thin film, involves spraying precursor solution prepared using graphene dispersion liquid on silicon substrate, drying and heating.

CHEN J, LI J, CHEN L, ZHANG Z, ZHOU J

Graphene thin film used for electrical devices and electrodes, is prepared by carrying out pretreatment process, oxidation process, reduction process, modification process and membrane measurement process.

CUI L, LIU J, WANG R