国家/地区 中国（3）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B023/02（4）
发明人
公开年 2022（2）
申请年 2021（4）
专利权人

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C