国家/地区 美国（5） 中国（4） 世界知识产权组织（3）
IPC部 B（6）
IPC大类 B82（6） C30（6） C01（4）
C23（4） H01（2）
IPC小类 B82Y（6）
IPC B82Y030/00（6）
发明人 WANG H（2）
公开年 2012（6）
申请年 2012（5） 
专利权人 WANG H（2）

Forming single-layer graphene film by replacing portion of air in a reactor having a substrate with a buffer gas, flowing the buffer gas through the reactor and then heating the reactor, and passing the buffer gas through liquid precursors.

RADHAKRISHNAN G, ADAMS P M

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Manufacturing electrode, used in e.g. supercapacitor, comprises using precursor particles to form nanoparticles on graphene sheet and diffusing and re-crystallizing nanoparticles to form single-crystal structure on surface of graphene sheet.

DAI H, WANG H

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Three-dimensional graphene/metal line or metal wire composite structure for solar cell and storage battery, is formed by growing graphene on outer surface of metal line by coating carbon source using chemical vapor deposition method.

BI H, HUANG F, LIN T

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y