国家/地区 中国（2）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC H01L021/02（4）
发明人
公开年 2019（2） 2021（2）
申请年 2019（4）
专利权人

Phonovoltaic cell used as part of phonovoltaic pile of contiguous phonovoltaic cell comprises first and second conductor layer, first boron layer in contact with the first conductor layer, second boron layer in contact with the second boron layer.

CURRAN P

Manufacture of semiconductor substrate structure involves preparing intermediate structure by forming graphene layer on diamond wafer substrate, forming hexagonal-boron nitride layer on structure and forming gallium nitride epilayer.

LEE T, CHO S

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H