国家/地区 中国（10）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B031/04（8） C01B032/184（4） C01B031/02（2）
发明人 ZHANG D（10）
公开年 2015（10）
申请年 2014（5）  2015（5） 
专利权人 UNIV SHANGHA.（3） SHANGHAI INS.（2）

Preparing reversible N-type graphene by forming graphene layer on substrate, placing substrate, on which graphene layer grows, in atomic layer deposition chamber, and increasing concentration of water in water/oxygen molecule pair.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Preparation of three-dimensional hierarchical porous graphene used for, e.g. supercapacitor by adding graphite oxide to deionized water, stirring, adding metal polyoxometalate and polymer beads, mixing, filtering, drying, and calcining.

CHEN G, HUANG L, SHI L, WANG H, ZHANG D, YAN T, ZHANG J, ZHONG Q

Preparation of three-dimensional graphene/mesoporous carbon sphere composite material involves mixing phenol, formaldehyde solution and sodium hydroxide, then adding structure-directing agent, and stirring, drying, and calcining.

LEI H, SHI L, ZHANG D, YAN T, ZHANG J

Preparing porous graphene material, useful e.g. for super-capacitor, comprises e.g. cleaning straw with ethanol and deionized, adding dilute sulfuric acid, reacting, filtering, and stirring or dispersing pre-carbonized straw in iron salt.

SHI L, WANG H, ZHANG D, YAN T

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Atomic-level mechanical peeling cleaning of graphene surface used for field effect transistor or electric conduction film by taking target substrate, adhering graphene, soaking in organic solvent, and dissolving graphene surface.

JIN Z, PENG S, WANG X, ZHANG D, WANG S, SHI J

Graphene thin film preparation involves coating graphene oxide acid solution on magnesium thin film, drying deposited graphene oxide, and dissolving magnesium thin film using dilute hydrochloric acid to obtain graphene film.

SU J, ZHANG D, ZHOU Y, DONG W

Manufacture of poly-1,8-naphthalene diamine-grafted graphene oxide involves dissolving graphene oxide and 1,8-naphthalene diamine in acetonitrile, ultrasonically treating, dripping ammonium persulfate, stirring, reacting and filtering.

ZHOU H, ZHOU Z, ZHANG D, OU B

Preparation of graphene used in energy sources such as lithium cells and solar cells by taking graphitized spiral carbon fiber as raw material and subjecting to modified Hummers method to prepare graphene with controllable number of layers.

GAO Y, LIN H, YAO R, ZHANG D, ZHAO D

Preparation of graphene by adding graphite particles and electrolyte into mixer, stirring, putting into magnetic field, agitating, putting into magnetic field, rotating, combining electrolyte ion and graphene, centrifuging and precipitating.

ZHANG D, ZHANG Z