国家/地区 韩国（5）
IPC部 C（5）
IPC大类 C01（5） B01（2） B82（2）
H01（2）
IPC小类 C01B（5）
IPC C01B032/184（5）
发明人 KIM S（5）
公开年 2020（2）
申请年 2015（2） 
专利权人

Manufacturing silicon-carbon-graphene composite involves mixing silicon, carbon source, and graphene oxide in a single process to prepare dispersed suspension, forming suspension into silicon-carbon source-graphene oxide complex.

JANG H, KIM S, CHANG H K

Producing silicon carbide sheets useful in producing high heat dissipation polymer composite for electronic product i.e. electronic circuit, comprises reducing graphene oxide, and synthesizing silicon carbide sheets from graphene sheets.

KIM S, VU M

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Graphene membrane film used in system for purifying solvent, comprises several plate-shaped laminated graphene flakes containing physical bond or chemical bond for connecting pair of layers, and has preset thickness and oxygen content.

LEE S H, KIM S J, SEO D K, KIM Y H, GEONHUI L, LEE S, KIM S

Graphene structure for electronic component e.g. transistor, comprises two-dimensional base graphene layer having defect, and linking material formed at defect of base graphene layer.

SUNG M, KIM S, MO S M, KIM S J, CHENG M