国家/地区 美国（4） 韩国（3） 中国（2）
IPC部 H（4）
IPC大类 H01（4） C01（2）
IPC小类 H01L（4） C01B（2）
IPC H01L029/16（3） H01L021/02（2）
发明人 LEE C（4）
公开年 2015（3）
申请年 2015（2） 
专利权人 LEE C（4）

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Graphene device e.g. graphene transistor has gate insulating layer that is mounted on capping layer to cover channel region and gate is mounted on gate insulating layer between source electrode and drain electrode.

XIANYU W, MOON C, LEE J, LEE C

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S