国家/地区 韩国（6） 美国（4）
IPC部 C（7）
IPC大类 C01（7） H01（7） B32（2）
B82（2） C08（2） C09（2）
C23（2）
IPC小类 C01B（7）
IPC C01B031/04（5） H01B001/04（3） B82Y030/00（2）
C01B031/02（2） C23C016/26（2）
发明人 LEE S H（7）
公开年 2011（2） 2016（2）
申请年 2011（2）  2016（2） 
专利权人 KOREA INST SCI TECHNOLOGY（7）

Artificial solid electrolyte interphase of anode used for secondary battery i.e. lithium metal secondary battery, comprises multi-walled carbon nanotube thin film or reduced graphene oxide thin film to protect anode material.

CHO W I, KIM M S, LEE S H, DO VAN D, NAH I W, OH I H, CHOWONIL, KIMMUNSEK, KIM M, DOVANDUNG

Protection film useful for producing organic electronic device, comprises multiple plasma-treated graphene layers, and a non-plasma-treated pure graphene layer deposited on the plasma-treated graphene layer.

BAE S, KIM S J, KIM T W, LEE S H, KIM M J, LEE S K, SEO T H, PARK M

Polymer nanomesh used for preparation of graphene nanomesh, has planar structure having cyclized nanomesh-forming polymer and two-dimensional holes arranged on planar structure.

JOH H, SON S Y, LEE S H, KIM T

Non-volatile memory device consists of substrate, lower electrode, active layer containing metal oxide-graphene quantum dots and organic polymer material, and upper electrode, in order.

KIM T W, SON D I, BAE S, LEE S H, MOON B J, LEE D S, PARK M

Manufacture of reduced graphene oxide for manufacturing reduced graphene-polymer composite, involves treating graphite with strong acid, mixing with halogen-substituted aromatic compound and stirring.

KU B C, PARK O K, LEE S H, NA S I, JO H I, KIM J K, LEE J H, KU B, PARK O

Method for manufacturing carbon material for laminated product, involves placing carbon atom in graphene layer, forming polymer layer in graphene layer, stabilizing atom, carbonizing polymer layer, and coating solution on polymer layer.

JO H I, LEE S H, KU B C, KIM J K, KIM T W, HWANG S Y

AA' stacked graphite for use as e.g. electrode material for flexible display, comprises graphene stacked in sequence of AA', where AA' sequence is alternate graphene layers exhibiting AA' stacking translated by half hexagon.

AHN J, LEE J, LEE S, LEE W, LEE U, LEE J K, LEE S H, AHN J P, LEE S C, LEE W S