国家/地区 韩国（4） 美国（2）
IPC部 C（4）
IPC大类 C01（4） H01（4）
IPC小类 C01B（4）
IPC H01L029/16（4）
发明人
公开年 2017（2）
申请年
专利权人 KOREA INST SCI TECHNOLOGY（4）

Method for directly synthesizing graphene on surface of target object, involves forming non-metal layer on support substrate, disposing target object in space above support substrate, and injecting carbon precursor to form graphene.

SONG Y, UDDIN M S, PARK J, PARKJAEHYUN

Protection film useful for producing organic electronic device, comprises multiple plasma-treated graphene layers, and a non-plasma-treated pure graphene layer deposited on the plasma-treated graphene layer.

BAE S, KIM S J, KIM T W, LEE S H, KIM M J, LEE S K, SEO T H, PARK M

Manufacturing graphene oxide film used as hole injection layer or precursor transport layer in organic electro-luminescent device, involves preparing graphene oxide dispersion.

KIM J Y, KIM S I, KIM Y H, KIM Y T, KIM C K

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J