国家/地区 韩国（4） 美国（3）
IPC部 C（4）
IPC大类 C01（4） H01（4）
IPC小类 C01B（4）
IPC H01L029/786（4）
发明人 SONG Y（2）
公开年
申请年 2014（2） 
专利权人 KOREA INST SCI TECHNOLOGY（4）

Method for directly synthesizing graphene on surface of target object, involves forming non-metal layer on support substrate, disposing target object in space above support substrate, and injecting carbon precursor to form graphene.

SONG Y, UDDIN M S, PARK J, PARKJAEHYUN

Manufacturing graphene oxide film used as hole injection layer or precursor transport layer in organic electro-luminescent device, involves preparing graphene oxide dispersion.

KIM J Y, KIM S I, KIM Y H, KIM Y T, KIM C K

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M