国家/地区 韩国（4） 美国（3）
IPC部 C（4）
IPC大类 C01（4） H01（4）
IPC小类 C01B（4）
IPC C01B031/04（3） C01B031/02（2）
发明人
公开年 2015（4）
申请年 2014（3） 
专利权人 KOREA INST SCI TECHNOLOGY（4）

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Process for forming PN junction in graphene layer through deoxyribonucleic acid (DNA) coating, involves forming DNA lamina molecular having base structure of array in order to absorb on second area of graphene layer.

KIM C, KIM Y J, JUNG Y M, JUN S C, LEE T, LEE S, BYUN Y T, WOO D H, KIM S H, SEO M A, KIM J H, YI J C

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Manufacture of graphene-zinc oxide complex used in manufacture of piezoelectric element, involves dispersing graphene in solvent, seeding by adding zinc oxide precursor, adding e.g. tetramine, and growing zinc oxide on graphene.

KIM S Y, KIM H S, YANG C M, YU J, JUNG Y C, LEE H S