国家/地区 美国（19） 中国（13） 世界知识产权组织（12） 日本（9） 韩国（8） 欧洲专利局（EPO）（5） 台湾（4）
IPC部 C（19）
IPC大类 C01（19）
IPC小类 C01B（19）
IPC C01B031/04（19）
发明人 FAN F Y（3） FAN S（3） HONG B H（3）
JIANG K（3） LIN X（3） LIN X Y（3）
XIAO L（3） AHN J（2） AHN J H（2）
BAE S（2） BAE S K（2） CHOE P（2）
CHOI B（2） CHOI B L（2） HONG B（2）
公开年 2012（19）
申请年 2011（12）  2012（7） 
专利权人 HON HAI PREC.（3） HONGFUJIN PR.（3） SAMSUNG ELEC.（3） UNIV SUNGKYU.（3）
UNIV TSINGHU.（3） GRAPHENE SQU.（2） HANWHA TECHW.（2） SAMSUNG TECH.（2）
UNIV SUNGKYU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Manufacture of graphene film used for e.g. transparent display, involves forming graphene on catalyst metal film, forming another film on surface of graphene, on which catalyst metal film is not formed, and removing catalyst metal film.

SONG Y, SONG Y I

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B