国家/地区 日本（7） 美国（4） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（2） 韩国（2）
IPC部 B（7）
IPC大类 B82（7）
IPC小类 B82Y（7）
IPC B82Y030/00（7）
发明人
公开年 2014（7）
申请年 2013（5）  2014（2） 
专利权人 FUJITSU LTD（2）

Separating graphene used for e.g. semiconductor device, comprises providing container including graphite particle, graphene and solvent, separating graphite particles from container using magnetic field, and discharging solvent from outlet.

KITAURA H, NISHIKI N, NISHIKAWA K, NAKAYA K, TANAKA A, NAKATANI K, NISHIGI N, TANAGA A

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Formation of modified graphene surface used for forming graphene layer for device e.g. nanoelectromechanical systems, involves providing defect-free graphene monolayer, and providing molecules comprising binding group in solvent.

SCHNEIDER G F, DEKKER C, DECKER C

Nanographitic composite for use as anode in lithium ion battery for commercial application, has graphene nanoplatelets coating portion of nanoscale particles to form layer made up of overlapping nanoplatelets.

BAMBHANIA H M, DO I, WANG H, WANG L

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Concurrently forming ammonia and solid carbon products e.g. graphene, includes reacting carbon oxide, nitrogen and reducing agent in presence of catalyst to form solid carbon entrained in tail gas mixture, and recovering ammonia.

NOYES D B

Manufacture of peeling graphene film for preparation of super capacitor element involves applying voltage to graphite electrode immersed in electrolyte solution which contains salt of alkali metal or alkaline earth metal as electrolyte.

FUJITA J, MURAKAMI K, TANG J