国家/地区 中国（4） 美国（3） 世界知识产权组织（3）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B021/064（6）
发明人
公开年 2021（3） 2022（2）
申请年 2020（2）  2022（2） 
专利权人

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Pellicle film used for extreme UV lithography, comprises boron nitride nanostructure layer.

CHOI J H, CHO S J, YU L, KIM C, LEE S Y, SEO K W, KIM K S, MOON S Y, KIMCHUNG, SEO K

Terahertz modulator based on graphene/boron nitride heterogeneous structure for use e.g. in teraherz compressed sensing imaging comprises p-type silicon substrate, boron nitride film, graphene film and infrared laser beam.

WANG Z, WEN T

Hyperbolic super-surface for hypersurface imaging and light energy transmission device to form hyperlens based on graphene-boron nitride lateral heterojunction, has heterostructure layer that comprises periodic nano-grating structure formed by strip-shaped graphene and boron nitride layers.

WANG X, CHEN K

Method of monitoring production of material in liquid dispersion in real time involves supplying dispersion to fluid gap between light-transmissive layer and layer having reflective surface, illuminating and determining concentration.

PETIT C, MATAR O, STAFFORD J

Electronic device useful as e.g. electronic display, comprises graphene layer, planar hexagonal boron nitride layer operably associated with graphene layer, power source, phosphor layer, and metal atoms intercalated in boron nitride layer.

SUNG C, SONG J