国家/地区 韩国（14） 美国（8） 中国（4） 日本（3）
IPC部 C（14）
IPC大类 C01（14）
IPC小类 C01B（14）
IPC C01B031/04（9） C01B031/02（6） B01J019/08（4）
B01J023/755（2） B82Y030/00（2） B82Y040/00（2）
C01B032/182（2） C23C016/26（2） G11B007/245（2）
G11B007/26（2）
发明人 JUNG H（14）
公开年 2014（6） 2011（2） 2017（2）
申请年 2013（5）  2010（2）  2016（2） 
专利权人 UNIV SEOUL N.（5） SNU R DB FO.（4） TOSHIBA SAMS.（4） UNIV DONGGUK.（4）
SAMSUNG ELEC.（3）

Polyimide film is obtained by imidization reaction of polyamic acid containing quinoline and beta-picoline as imidation catalyst and acetic anhydride as dehydrating agent.

JUNG H, WON D, WON D Y

NaCl-rGO composite for a positive electrode active material of a sodium secondary battery (all claimed), such as mobile phones, camcorders, research and development efforts on electrochemical devices, comprises rGO refers to reduced graphene oxide, and sodium chloride nanoparticles are located rGO.

CHANG W Y, JUNG H, KIM E S, IQRA M, ROH H K, CHUNG K Y, ZHANG Y, ZHENG X, KIM E, ROH H, ZHENG J, NOH H K, JUNG H G, CHANG W

Nitrogen-doped mesoporous graphene used as electrode active material of energy storage device, has curved structure, in which size of pores is controlled based on cleaning solution.

JUNG H, LEE J H, KIM H J

Mesoporous graphene comprises multiple graphenes having curved shape, and has increased and controlled pore size, and excellent adsorption performance for volatile organic compounds having high specific surface area.

JUNG H, KANG M G, LEE J H

Graphene-based composite used in hydrogen storage medium, comprises graphene layer, and specific substituted polycyclic compound-based coupling agent provided between graphene layers.

RAE P C, JUNG H

Manufacture of nitrogen-doped graphene involves adding hydroxyl radical acceptor to aqueous graphite oxide solution, adding nitrogen precursor to solution, and irradiating radiation.

JUNG H, KANG Y M, KANG M, LEE D H, JO M R, YANG J H

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Disk for fabricating graphene comprises thermoplastic polymer substrate with reflection layer disposed on one side of thermoplastic polymer substrate, and graphite oxide layer provided on thermoplastic polymer substrate.

CHOI K, SONG B, CHOI N, SHIM H, JUNG H, LEE J, KIL S C, BYUNG Y S, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Optical disk e.g. optical recording and/or reproducing device for fabricating graphene comprises thermoplastic polymer substrate with reflection layer for reflecting incident light; and graphite oxide layer applied on the substrate.

CHOI K, SONG B, CHOI N, SHIM H, JUNG H, LEE J, KIL S C, BYUNG Y S, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Apparatus for fabricating graphene comprises light source for irradiating graphite oxide layer on substrate; light source for irradiating irradiated graphite oxide layer; control unit for controlling irradiation from the light sources.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L