国家/地区 中国（19） 美国（5） 世界知识产权组织（5） 欧洲专利局（EPO）（4） 日本（4）
IPC部 C（24）
IPC大类 C01（24）
IPC小类 C01B（24）
IPC C01B031/04（24） C01B032/182（4） C01B032/184（4）
C01B032/198（4） C01B032/15（3） C01B032/18（3）
C01B032/20（3） C01B032/23（3） B82B001/00（2）
B82Y030/00（2） B82Y040/00（2） C01B031/02（2）
C01B032/186（2） C01B032/192（2） C01B032/194（2）
发明人 ZHANG M（24）
公开年 2015（24）
申请年 2014（15）  2015（7）  2013（2） 
专利权人 JIANGSU JIAN.（8） CARBON NANO .（4） SHANGHAI INS.（4） SHENZHEN CAN.（4）
SHENZHEN YUE.（2）

Preparation of nanowire and graphene composite material by providing silicon germanium-on-insulator substrate comprising silicon substrate, oxide layer and silicon germanium layer from bottom to top, and etching silicon germanium layer.

DI Z, XUE Z, ZHANG M, YE L, DAI J, WANG Z

Preparation of graphene oxide hydrogel for manufacturing e.g. graphene oxide fibers, involves annealing graphene oxide dispersion, or mixing graphene oxide dispersion and acid solution and carrying out sol-gel phase transition reaction.

LI C, LIU Q, SHI G, ZHANG M

Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.

DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of wrinkle-free graphene involves subjecting catalytic substrate to ion injection, forming discrete end injection units at catalytic substrate, and heating catalytic substrate in growth chamber.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Preparation of textured graphite for, e.g. sensor, involves placing catalytic substrate in growth chamber, introducing carbon source, heating to grow graphene, and cooling in non-oxidizing protective atmosphere to form graphene surface.

DI Z, WANG G, SHI X, XUE Z, ZHANG M, ZHENG X, DAI J

Method for preparing graphene thin film, involves pressing film and fixing in furnace in graphite to carry out high temperature treatment under inert gas protection.

LAI C, QI S, TIAN G, WANG Z, WU D, ZHANG M

Repairing reduced graphene oxide comprises e.g. reacting graphene oxide with Lewis acid and methyl containing compound, refluxing, adding Lewis acid and repair agent, reacting, mixing with metal powder catalyst, reacting and annealing.

ZHANG M, ZHANG L

Large-scale preparation graphene quantum dots, comprises adding graphene oxide into first solvent to obtain first dispersion solution, adding reducing agent, reacting, carrying out solid-liquid separation and cooling to obtain crude product.

ZHANG M, ZHANG L

Device used for spray drying method and microwave production of graphene, comprises microwave oven cavity, spray drying device, cyclone collector, close wind discharging device, material discharge pipe, atomizer, and drying room.

LI Z, ZHANG M, CAI J

Device for industrial production of graphene using microwave, has furnace pipe whose output end is connected with product collector and whose input end is provided with inert gas inlet and compression air inlet.

LI Z, ZHANG M, CAI J