国家/地区 韩国（5） 美国（5） 中国（4） 日本（4） 世界知识产权组织（4） 欧洲专利局（EPO）（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/182（6）
发明人
公开年 2015（2）
申请年 2014（2）  2017（2） 
专利权人

Preparing metal oxide-doped graphene used for field effect transistor, and in p-type semiconductor, comprises e.g. depositing graphene on first substrate, and transferring deposited graphene onto second substrate to form graphene electrode.

KYU K E, SOO P C

Electrolytic copper foil used for producing graphene, has preset ratio of surface roughness of copper foil and surface roughness of copper foil after heat treatment.

JO T J, LEE S H, PARK S, SONG K D, TAE J J, SUNHYOUNG L, SEULKI P, KIDEOK S, JO T, LEE S, SONG K

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Method for increasing service lifetime of electronic apparatus placed within compartment of vehicle or on exterior of vehicle, involves placing graphene coating layer on environment-facing surface of electronic component of apparatus.

LI A W, HUNT J H, HOWE W R

Thermoelectric composite material useful in thermoelectric generators comprises a metal oxide material; and graphene or modified graphene dispersed throughout the metal oxide material.

FREER R, NORMAN C, LIN Y, SRIVASTAVA D, KINLOCH I

Flexible substrate processing apparatus used for reducing graphene oxide to form graphene comprises substrate carrying-out portion; reduction treatment portion; washing portion; drying portion; and substrate carrying-in portion.

TAKAHASHI M, SAITO Y, MOMO J, MORIWAKA T, KUSUMOTO N, MORIWAKA K, YONEDA Y