国家/地区 中国（33） 美国（11） 韩国（8） 世界知识产权组织（4） 日本（2）
IPC部 C（49）
IPC大类 C01（49）
IPC小类 C01B（49） C23C（18） H01L（13）
C30B（6） B82Y（5） B01J（4）
C08K（2） C08L（2） C09K（2）
G02B（2） H01G（2） H01J（2）
H05K（2）
IPC C01B032/186（49）
发明人 CAI J（4） BAI Y（3） LEE C（3）
LEE C S（3） SHIN K（3） SHIN K W（3）
WANG J（3） XIE G（3） ZHAO Y（3）
BARAKET M（2） BYUN K（2） BYUN K E（2）
ELSAYED K A M（2） FANG C（2） GUO X（2）
公开年 2023（49）
申请年 2022（35）  2021（8）  2023（6） 
专利权人 SAMSUNG ELEC.（4） GUANGDONG MO.（3） UNIV SOUTHWE.（3） GEN GRAPHENE.（2）
SUZHOU SHENG.（2） UNIV IMAM AB.（2） UNIV SHAANXI.（2） XIAMEN KNANO.（2）

Method for preparing non-contact limiting domain growth graphene, involves providing inner cavity of CVD furnace with barrier layer, and placing growth substrate below barrier layer, distance interval between barrier layer and growth substrate.

CHEN G, CHEN Q, CAI J

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

System for forming graphene used in different types of commercial applications, e.g. batteries, comprises substrate holder designed for holding substrate sheet, outfeed tunnels provided adjacent to substrate holder, multiple processing sub-enclosures provided adjacent to outfeed tunnels.

SHERRILL V, BARAKET M, PHILPOTT R

Method for fabricating two-dimensional channel transistor involves growing hexagonal-boron nitride layer on substrate, selectively etching hexagonal-boron nitride layer by exposing hexagonal-boron nitride layer to sulfur hexafluoride plasma gas, and treating etched layer in potassium hydroxide.

SHRIVASTAVA M, RAWAT J S, MEERSHA A

Electromagnetic interference suppressing material used as radio wave absorber, noise suppression sheet, semiconductor sealing material, sealing sheet, and wire coating material, comprises base material containing organic substances and inorganic substances, and powdered carbon material.

NISHIHARA H, YOSHIDA S, UCHIDA K

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

High-quality graphene powder growth and synchronous hydrogen production method, involves generating cracking reaction in liquid metal by carbon source gas, and collecting graphene bubble rising to surface of liquid metal and exhaust gas to purify exhaust gas to obtain hydrogen.

FANG C, LIN J, HUANG W, HONG J

Production device with graphene recycling structure, has graphene top portion that is fixedly connected with gas conveying box, and inner top graphene of production device main portion is connected with air inlet pipe.

ZHU J

Preparation of carbon nano tube/graphene/pyrolytic carbon composite material used in e.g. aviation, involves growing graphene in carbon nano-tube in graphene/nickel foam, and filling pyrolysis carbon using precursor dipping cracking ethod to fill pyrolytic carbon.

SHAO D, WANG S, LI Y, YANG J, JIA X, SONG H, WANG C, WEI P, FENG L, DING S

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M