国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B031/04（5） C04B041/50（4） C01B032/184（3）
C04B041/85（3）
发明人 GUO H（8）
公开年 2013（3）
申请年 2013（3） 
专利权人 UNIV XIDIAN（4）

Quartz crucible for manufacturing graphene, has inner side wall and outer side wall provided with radiation coating, where radiation coating is made of high radiation rate ceramic slurry coating.

QI Q, ZHENG H, WANG Z, YANG K, SONG Y, WANG W, FANG P, MEI T, XIAO S, GUO H, HU S

Graphene additive preparation device for cement materials, comprises weighing hopper, feeding pump, stirring tank, screw pump, and circulation box, where weighing hopper is connected with feeding pump connected with stirring tank.

PAN D, GUO H, ZHANG L, WANG F

Preparing graphene on diamond surface involves cleaning diamond powder and graphite powder with ammonia water in ultrasonic water bath and filtering with alcohol, and drying in an oven, and obtaining dried diamond powder.

GUO H, ZHANG Z, ZHANG X

Preparing graphene aerogel material by mixing graphene oxide and matrix filler, stirring, adding catalyst, stirring, pouring precursor solution and reinforcing fiber into mold, sealing, heating and adding acetone solution.

GUO H, JIN Z, LIU B, PEI Y, ZHAO Y

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F