国家/地区 日本（13）
IPC部 C（13）
IPC大类 C07（13）
IPC小类 C01B（11） C07C（11） B82Y（5）
H01L（5） C07D（4） C07B（3）
C09D（3） H01B（3） B01J（2）
C08G（2） C08K（2） C08L（2）
C09K（2） C23C（2） H01G（2）
IPC C01B031/02（10） C01B031/04（9） B82Y040/00（5）
C01B032/182（5） B82Y030/00（4） C01B032/15（4）
C01B032/18（3） C01B032/184（3） C07B061/00（3）
C07C015/14（3） C07C025/22（3） H01L051/00（3）
C01B032/19（2） C01B032/194（2） C07C015/20（2）
发明人 MUELLEN K（4） FENG X（3） MILLEN K（3）
MULLEN K（3） CAI J（2） FASEL R（2）
RUFFIEUX P（2） TSAI J（2）
公开年 2013（5） 2014（4） 2015（4）
申请年 2013（13）
专利权人 BASF CHINA C.（4） BASF SE（4） MAX PLANCK G.（4） BASF SCHWEIZ.（2）

Energy device used in supercapacitor, consists of paper based substrate having top surface and bottom surface, and graphene oxide and carbon nanotube composite deposited on top surface.

WANG W, GUO S, OZKAN C S, OZKAN M

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Manufacture of functionalized graphene used for e.g. barrier material, involves forming mixture using graphite oxide, solvent and functionalized compound containing sulfur and amino group, reacting, and recovering resultant graphene.

LEE J S, DO SEUNG H, JEON S Y, HAN G W, KONG J H, DO S H, LEE J, DO S, JEON S, HAN G, KONG J

Producing in electrochemical cell of one or more of graphene, graphite nanoplatelet structures, and graphane, involves passing current through cell to intercalate ions into graphitic negative electrode.

DRYFE R A W, KINLOCH I A, ABDELKADER A M, JEFF R A W, DRYFE R A V

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

Method for carrying metal on graphene oxide for metal-oxidation graphene complex, involves adding solution of metal salt or metal ion to oxidation graphene dispersion, and adding alcohol, N,N-dimethylformamide and/or tetrahydrofuran.

NISHINA YUTA

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K

New imidazolidine-type compound used for mixed ionic liquid for preparation of graphene dispersion liquid for electronic component e.g. energy storage electrical appliance and lithium-ion secondary battery.

AIDA TAKUZO, PARK CHIYOUNG, RAVI SAISUWAN, MATSUMOTO MICHIO, AIDA T, PARK C, RAVI S, MATSUMOTO M