国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C23C016/26（4）
发明人 DU C（4）
公开年 2014（2） 2015（2）
申请年 2014（4）
专利权人 CHINESE ACAD.（4） CHONGQING MO.（2）

Atmospheric pressure chemical vapor deposition of graphene to form graphene film, involves cleaning copper foil substrate, annealing, forming graphene crystal domains on substrate, nucleating, melting to form graphene film, and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Covering of three-dimensional structure substrate surface with graphene thin film involves cleaning and drying surface of three-dimensional structure substrate and placing in vacuum chamber of chemical vapor deposition device.

SHI H, JIANG H, YANG J, ZHANG Y, WEI D, DU C, LI Z, ZHU P, HUANG D, YU C

Direct conformal covering of graphene on needle tip surface for e.g. atomic force microscope electrically conductive needle tip involves cleaning needle tip surface, drying, placing in vacuum chamber, and discharging vacuum chamber air.

DU C, JIANG H, LI Z, SHI H, YANG J, ZHANG Y, WEI D, ZHU P, HUANG D, YU C