国家/地区 韩国（6） 美国（4） 中国（2） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6） C01B（3） H01L（2）
IPC C01B031/02（3） C01B031/04（2） C23C016/26（2）
发明人 KIM T H（6）
公开年 2014（2）
申请年 2018（2） 
专利权人 LG ELECTRONI.（2） UNIV SUNGKYU.（2）

Formation of material film used in electronic device, by forming material film on partial region of substrate using sputtering process, removing non-photosensitive mask from substrate, and heat-treating substrate and material film.

JUNG J, KIM T, ZHAO P, SHIN M, SHIN H, SEOL M, KIM S, BYUN K, BYUN K E, KIM S W, SHIN H J, SHIN M S, JOVIN, KIM T H, JUNG J H

Metal heat sink comprises a substrate, multiple metal plates positioned on the substrate and deposited by metal of the same material, and graphene inserted between the metal plate.

KIM K, KWANGJIN O, YEOM G Y, KIM T H, LEE S J

Catalyst-free electroless plating of e.g. graphene, involves introducing composition containing nickel, iron, cobalt and/or copper precursor, to solution containing to-be-plated component, to set preset metal precursor concentration.

KIM T H, LEE S B, JUNG B M, LEE K B

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Gas barrier film used for flexible substrate, has primary graphene layer formed on macromolecular film, and membranous polymer film.

KIM T H, KIM Y K, KEE S B, KIM S K, IM C G, HO K T, GWON K Y, BEOM G S, GUK K S, GYU I C