国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） H01L（3） C30B（2）
IPC C23C014/06（4）
发明人 HAO Y（4）
公开年 2016（3）
申请年 2016（3） 
专利权人 UNIV XIDIAN（4）

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Growing method of aluminum nitride layer and gallium nitride layer on graphene by magnetic sputtering involves supplying hydrogen to quartz tube furnace containing clean copper tube, cooling and obtaining graphene.

CHEN Z, HAO Y, ZHANG J, LV J

Growing gallium nitride with silicon graphene using magnetron sputtering of aluminum nitride involves using chemical vapor deposition method and growing graphene on metal substrate, obtained product is placing in mixed solution.

CHEN Z, HAO Y, ZHANG J, LV J

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z